cdnbs08-slvu2.8-8 ?low capacitance tvs array features lead free device (rohs compliant*) protects up to 4 i/o ports bidirectional configuration esd protection low capacitance 6 pf applications ethernet ?10/100/1000 base t personal digital assistant handheld electronics cellular phones video cards general information electrical characteristics (@ t a = 25 ? unless otherwise noted) thermal characteristics (@ t a = 25 ? unless otherwise noted) the markets of portable communications, computing and video equipment are challenging the semiconductor industry to develop increasingly smaller electronic components. bourns offers transient voltage suppressor array combination diodes for surge and esd protection applications in an 8 lead narrow body soic package size format. bourns chip diodes conform to jedec standards, are easy to handle on standard pick and place equipment and their flat configuration minimizes roll away. the bourns?device will meet iec 61000-4-2 (esd), iec 61000-4-4 (eft) and iec 61000-4-5 (surge) requirements. parameter symbol min. nom. max. unit peak pulse current (t p = 8/20 ?) i pp 30 a peak pulse power (t p = 8/20 ?) 1 p pp 600 w working voltage v wm 2.8 v breakdown voltage @ 1 ma v br 3.0 v leakage current @ v wm i d 1.0 ? capacitance @ 0 v, 1 mhz c 6 pf snapback voltage 2.8 v clamping voltage @ i pp = 2 a v c 5.5 v @ i pp = 5 a v c 8.5 v @ i pp = 24 a v c 15 v @ i pp = 30 a v c 17 v parameter symbol min. nom. max. unit operating temperature t j -55 +25 +150 ? storage temperature t stg -55 +25 +150 ? note: 1. see peak pulse power vs. pulse time. 8765 1234 *rohs directive 2002/95/ec jan 27 2003 including annex. specifications are subject to change without notice. customers should verify actual device performance in their specific applications. *rohs compliant
cdnbs08-slvu2.8-8 ?low capacitance tvs array mechanical characteristics a b d e c f h g millimeters (inches) dimensions = ab c d e dimensions a 4.80 - 5.00 (0.189 - 0.196) b 3.80 - 4.00 (0.150 - 0.157) c 5.80 - 6.20 (0.229 - 0.244) d 1.35 - 1.75 (0.054 - 0.068) e 0.10 - 0.25 (0.004 - 0.008) f 0.25 - 0.50 (0.010 - 0.019) g 0.40 - 1.250 (0.016 - 0.049) h 0.18 - 0.25 (0.007 - 0.009) dimensions a 1.143 - 1.397 (0.045 - 0.055) b 0.635 - 0.889 (0.025 - 0.035) c 6.223 (0.245) min. d 3.937 - 4.191 (0.155 - 0.165) e 1.016 - 1.27 (0.040 - 0.050) this is a molded jedec narrow body so-8 package with lead free 100 % sn plating on the lead frame. it weighs approximately 15 m g and has a flammability rating of ul 94v-0. specifications are subject to change without notice. customers should verify actual device performance in their specific applications. recommended footprint how to order cd nbs08 - slvu 2.8 - 8 common code cd = chip diode package nbs08 = narrow body soic8 package model slvu = low capacitance tvs array working peak reverse voltage 2.8 = 2.8 v rwm (volts) number of diodes product dimensions cdnbs08-slvu2.8-8 .......................................................... sl8 typical part marking
cdnbs08-slvu2.8-8 ?low capacitance tvs array specifications are subject to change without notice. customers should verify actual device performance in their specific applications. packaging the surface mount product is packaged in a 8 mm x 4 mm tape and reel format per eia-481 standard. 2.0 ?0.05 (.08 ?.002) 0.3 ?0.05 (.01 ?.002) 9.0 ?0.1 (.354 ?.004) 6.4 ?0.1 (.252 ?.004) 1.75 ?0.1 (.07 ?.004) 5.5 ?0.3 (.22 ?.01) 12.0 ?0.3 (.47 ?.01) 2.1 ?0.1 (.083 ?.004) orientation of component in pocket backside facing up top side view (into component pocket) 0.3 (0.01) 4.0 ?0.1 (.16 ?.004) 8.0 ?0.3 (.31 ?.01) 0.25 (0.010) typ. r 1.5 ?0.1/-0 (.06 ?.004/-0) dia. max. r block diagram 8765 1234 device pinout bidirectional bidirectional differential pin common mode mode 1 line 1 line pair 1 2 gnd line pair 1 3 gnd line pair 2 4 line 4 line pair 2 5 line 3 line pair 4 6 gnd line pair 4 7 gnd line pair 3 8 line 2 line pair 3
cdnbs08-slvu2.8-8 ?low capacitance tvs array specifications are subject to change without notice. customers should verify actual device performance in their specific applications. performance graphs peak pulse power vs pulse time 10,000 1,000 100 10 1 0.01 10 100 10,000 1,000 p pp ?peak pulse current (w) t d ?pulse duration (?) 600 w, 8/20 ? waveform pulse wave form 20 40 60 80 100 120 0 030 25 20 15 10 5 i pp ?peak pulse current (% of i pp ) t ?time (?) test waveform parameters t t = 8 ? t d = 20 ? t t e t t d = t | i pp /2 power derating curve 0 20 40 60 80 100 0 25 50 75 100 125 150 % of rated power t l ?lead temperature (?) average power peak pulse power 8/20 ? reliable electronic solutions asia-pacific: tel: +886-2 2562-4117 ?fax: +886-2 2562-4116 europe: tel: +41-41 768 5555 ?fax: +41-41 768 5510 the americas: tel: +1-951 781-5500 ?fax: +1-951 781-5700 www.bourns.com rev. 05/06
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